Abstract
LT-GaAs, with subpicosecond photoexcited carrier lifetime, is currently the premier material for fabricating ultrafast optoelectronic devices.1 An alternate arsenic-rich material, arsenic-ion-implanted (As+—implanted) GaAs, or GaAs:As+ has recently emerged.2 The structural and electrical characteristics of GaAs:As+ and LT-GaAs are very similar.
© 1996 Optical Society of America
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