Abstract
The semi-insulating AlGaAs/GaAs MQW devices used were as described in Ref. 4 except that these devices did not have the highly reflecting coating but were used in transmission. Due to the very small thickness of the multiple quantum well (MQW) devices (~1 μm), they are used in the Raman-Nath regime such that the holograms are read-out with small angular separations between the zero- and first-diffracted orders. This, combined with the relatively narrow clearance between the electrodes (~1 mm), strongly impacts the system's imaging performance.
© 1996 Optical Society of America
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