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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuC5

4 Watt, high efficient, 0.81-µm SQW GRIN-SCH AlGaAs/GaAs laser diodes with broadened waveguide

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Abstract

The large optical cavity (LOC) design was successfully used to control neararid far-field radiation patterns and to increase output power of the first generation of double-heterostructure AlGaAs/ GaAs lasers.1 The design of modem QW lasers is mostly directed towards minimization of the threshold current density (Ith), which is usually achieved for waveguide thickness (W) around 200-300 nm. To the best of our knowkedge, however, no reliable experimental data has been published that shows the dependency of the laser performance upon waveguide thickness. Note that low Ith and very high power output were demonstrated for 0.8 µm laser diodes with W ≅ 600 nm.2

© 1996 Optical Society of America

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