Lateral, wet thermal oxidation of AlAsSb lattice-matched to InP

O. Blum; K. Geib; M. J. Hafich; J. F. Klem; K. L. Lear; C. I. H. Ashby

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1996),
paper CThU2

Lateral, wet thermal oxidation of AlAsSb lattice-matched to InP

O. Blum, K. Geib, M. J. Hafich, J. F. Klem, K. L. Lear, and C. I. H. Ashby

Conference on Lasers and Electro-Optics 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-443-2

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O. Blum, K. Geib, M. J. Hafich, J. F. Klem, K. L. Lear, and C. I. H. Ashby, "Lateral, wet thermal oxidation of AlAsSb lattice-matched to InP," in Conference on Lasers and Electro-Optics, J. Bowers, D. Miller, D. Scifres, and A. Weiner, eds., Vol. 9 of OSA Technical Digest (Optica Publishing Group, 1996), paper CThU2.

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Abstract

Recent advances in wet thermal oxidation of AlGaAs compounds have led to dramatic improvements in the performance of InGaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) in the λ < 1 μm wavelength regime.¹ Structures grown on InP cannot benefit from this technology because AlGaAs is mismatched to InP.

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