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GaN and related alloy materials are of great interest in view of UV and visible laser applications. Recently, optical gain in GaN and InGaN was calculated by a few groups, leading to predictions of the threshold current density from a few hundred A/cm2 to 25 kA/cm2 in quantum-well1,2 (QW) and double-heterostructure3,4 (DH) devices.
© 1996 Optical Society of America
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