Abstract
With the availability of Si/SiGe heterostructures, Si-based electronics is readily entering the 100-GHz frequency region.1 High-resistivity (>2000 Ω cm) Si appears as an attractive substrate material for SIMMWIC (Si-based MilliMeter-Wave Integrated Circuit) applications because of its low substrate losses. Substrate passivation needed for long-time stability and effective conductor insulation may strongly affect the electric properties of the surface. For circuit design, the exact knowledge of the altered characteristics of passivated Si substrates is essential.
© 1996 Optical Society of America
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