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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThK36

Theoretical calculation of gain for interdiffused GaAs/AlGaAs quantum well lasers

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Abstract

Interdiffusion is known to be a process for obtaining lasers with different emission wavelengths on the same wafer. The diffusion length is the product of the interdiffusion coefficient and the annealing time, and is used as a measure of the intermixing or disordering of the quantum well. In a recent paper1 we have studied the valence band structure of impurity-free interdiffused quantum wells, showing the important variation of the hole effective mass.

© 1996 Optical Society of America

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