Abstract

A new type of laser diodes and amplifiers based on asymmetric quantum well heterostructures having active layers of different thicknesses has been considered. In contrast to ordinary laser heterostructures, for such modified quantum wel systems, it is possible to change the gain spectrum in a wide range and to control the set of definite amplification frequencies by selecting the width and component composition of quantum wells and barrier regions.

© 1996 Optical Society of America