Abstract

The group velocity dispersion (GVD) of semiconductor waveguides is an important property that influences the performance of both active and passive devices. Models for calculating the GVD of waveguides involve solving Maxwell's equations using the waveguide composition together with the composition- and wavelength-dependent dielectric functions as input parameters. These models also yield the wavelength dependence of the guide's effective index of refraction; a useful parameter in the design of grating-based waveguide devices, such as DFB or DBR lasers. The wavelength-dependent dielectric constants of bulk GaAs and AlGaAs alloys are relatively well-documented, but it is more difficult to obtain refractive index parameters appropriate for InGaAs strain-layer quantum wells.

© 1996 Optical Society of America