Abstract
Photodetectors operating in the two infrared (IR) windows (3-5 μm, 8-14 μm) are very important for various industrial, military, and medical applications1. The current leading material systems for each wavelength regions are bulk InSb for 3-5 μm and HgCdTe for 8-14 μm range. However, both bulk InSb and HgCdTe detectors have many problems for the larger focal plane array (FPA) fabrication. Furthermore, HgCdTe has bad material properties originating from its ionic bond.
© 1996 Optical Society of America
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