Abstract
We describe time-resolved differential transmission measurements of carrier recombination, cooling, and transport in multiple quantum well structures composed of GalnSb/InAs superlattice wells with AlGaSb barriers. This and similar structures are currently of interest as the active region in 3-4-μm diode lasers.1,2 Measurements were performed at room temperature using 140-fs pump pulses from a mode-locked Ti:sapphire laser operating at 830 run and at a repetition rate of 76 MHz and 170-fs probe pulses from a synchronously-pumped optical parametric oscillator2 operating at 3.55 μm.
© 1996 Optical Society of America
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