Abstract
Wavelength stabilization is usually obtained in semiconductor lasers with a diffraction grating close to the gain region. Generally this requires complex lithography and at least one regrowth step. Furthermore, the light from a standard semiconductor laser is highly elliptical and cannot efficiently be coupled to an optical fiber. Frequently, the total power output is limited by catastrophic mirror damage that occurs when the optical field becomes excessive at the semiconductor- air interface.
© 1996 Optical Society of America
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