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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CMF3

Yield enhancement due to carrier-injection behavior in truncated-well gain-coupled DFBs

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Abstract

The achievement of a high yield of DFBs that lase in a single longitudinal mode is critical for the delivery of low-cost narrow-linewidth sources and photonic-integrated circuits. The use of gain-coupling has been successfully demonstrated as a means of achieving high single-mode yield,1 while also providing other advantages, such as high intrinsic bandwidth,2 improved reflection immunity,3 and a front-facet external quantum efficiency, which is controllable by the asymmetry of the facet reflectivities.

© 1996 Optical Society of America

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