Abstract
GaN has attracted a great deal of attention due to its potential use as an emitter in the UV-blue region and for -use in high-power and high-temperature electronics. Optical properties of GaN are being extensively studied1; however, very few experiments have focused on the nonlinear properties of GaN. Previously, we reported above room temperature lasing,2 and now we have extended our studies to include picosecond degenerate four-wave mixing experiments performed in GaN epilayers at 532 nm. By measuring the total scattering efficiency, a value of ~1 × 10−3 cm2/GW was determined for the nonlinear refractive coefficient. This value is much larger than the expected range for semiconductors. ZnSe has a value of 6.7 × 10−5 cm2/GW at 532 nm.3 Because, at this wavelength, the ratio of the photon to band gap energies (Eg/ħω) is larger for GaN than for ZnSe, a smaller value of n2 is expected for GaN,3 in contradiction to the observation.
© 1996 Optical Society of America
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