Abstract
The nature of the absorption band at 780 nm (at 300 K) in radiationally colored LiF crystals was investigated. It was shown that this absorption band formed under thermal annealing of crystals completely coincides with the absorption band of centers that were created by recharging of the neutral N1 centers under low-temperature electron reirradiation of the LiF crystal.
© 1996 Optical Society of America
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