Abstract
We have utilized a purely electrical technique to measure electron leakage current out of the active region in 1.3-μm InGaAsP/InP lasers. As an example, Fig. 1 shows the device structure for a bulk-active-region laser containing a small electron collector on top of the p-cladding layer in a conventional broad-areatructure. Electrons emitted from the active region into the p-cladding layer are trapped by a positively biased collector. Measurement of the collector reverse current a flows us to estimate the value of electron leakage under different conditions.
© 1995 Optical Society of America
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