Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CWF18

Experimental studies and modeling of electron leakage current from the active region in InGaAsP/InP semiconductor lasers

Not Accessible

Your library or personal account may give you access

Abstract

We have utilized a purely electrical technique to measure electron leakage current out of the active region in 1.3-μm InGaAsP/InP lasers. As an example, Fig. 1 shows the device structure for a bulk-active-region laser containing a small electron collector on top of the p-cladding layer in a conventional broad-areatructure. Electrons emitted from the active region into the p-cladding layer are trapped by a positively biased collector. Measurement of the collector reverse current a flows us to estimate the value of electron leakage under different conditions.

© 1995 Optical Society of America

PDF Article
More Like This
Effect of p-doping on carrier leakage and characteristic temperature To of 1.3 μm strained InGaAsP/InP multiple quantum well lasers

D. V. Donetsky, G. L. Belenky, C. L. Reynolds, R. F. Kazarinov, and S. Luryi
CTuQ4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997

1.3 µm InGaAsP/InP MQW Lasers for High Temperature Operation Experiment and Modeling

G. Belenky, D. Donetsky, C. Reynolds, G. Shtengel, R. Kazarinov, and S. Luryi
CWL3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

Photoluminescence study of excess carrier spillover in 1.3-µm-wavelength strained multiple-quantum-well InGaAsP/InP laser structures

D. Garbuzov, G.-J. Shiau, V. Bulovic, M. Boroditsly, C.-P. Chao, and S. R. Forrest
CTuL2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved