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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CWD4

Internal-emission metal–semiconductor–metal photodetectors on Si and GaAs for 1.3–1.55-μm detection

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Abstract

Si and GaAs metal–semiconductor–metal photodetectors with submicrometer finger spacing are tested at a wavelength of 1.3 μm. As the finger spacing is decreased, the detectors responsivity first increased because of field-enhanced injection and then saturates and decreases because of carrier screening at the interface.

© 1995 Optical Society of America

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