Abstract
Advances in growth techniques and heterostructure design of AlGaInP-based materials have led to the recent development of vertical-cavity surface-emitting lasers emitting in the 660-690-nm spectral range.1 Key applications for these VCSELs include plastic-fiber-based communications, laser printing and scanning, and optical data storage. In this paper, we report on AlGaInP VCSELs employing a one-wave cavity that demonstrate substantial improvements in peak power, single-mode power, wall-plug efficiency, and elevated-temperature performance relative to all previously reported red VCSEL devices.
© 1995 Optical Society of America
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