Abstract
AlxGa1−xN is a direct-gap III-V material system whose band gap (3.6 eV for x = 0 and 6.2 eV for x = 1) and refractive index (2.52 for x = 0 and 2.2 for x = 1) can be tuned with alloy composition.1 Because of the highly ionic nature of the Al, Ga, and N bonds, AlxGa1−xN is expected to possess high nonlinear optical coefficients, e.g., for second-harmonic-generation (SHG) and the electro-optic effect. The commonly used material for integrated electro-optic modulators, LiNbO3, suffers from photorefractive damage and increased transmission loss for visible (blue-green) and near-UV applications. Therefore use of the electro-optic effect and waveguiding in GaN epitaxial layers opens up possibilities for integrated-optic modulators for this short-wavelength regime. Previous measurements on the SHG coefficients indicate nonlinear optical coefficients higher than those of KDP and quartz.2,3 This paper reports what we believe to be the first measurement of the electro-optic effect in GaN and demonstrates preliminary waveguide measurements in single-crystal GaN films.
© 1995 Optical Society of America
PDF ArticleMore Like This
H. Y. Zhang, X. H. He, Y. H. Shih, M. Schurman, Z. C. Feng, and R. A. Stall
CMC6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996
Steven Miller, Yoon-Ho Daniel Lee, Jaime Cardenas, Alexander L. Gaeta, and Michal Lipson
SF1G.4 CLEO: Science and Innovations (CLEO:S&I) 2015
R. F. Shi, S. Yamada, Y. M. Cai, O. Zamani-Khamiri, A. Panackal, and A. F. Garito
QWD28 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995