Abstract

It has been shown that both compressive-strained and tensile strained quantum-well lasers have laser performance superior to that of unstrained-quantum-well lasers.¹ The reduced in-plane effective mass of the top valence subband has been used to explain the improvement of the compressive-strained quantum-well lasers. It has been recently pointed out that enhancement of the optical-matrix element by using TM polarization will improve the gain for the tensile-strained quantum-well lasers.² For high-speed semiconductor-laser applications, it is desirable to have a narrow linewidth and a low chirp. The linewidth-enhancement factor³ is an important parameter for high-speed modulation of semiconductor lasers.

© 1995 Optical Society of America