Abstract

The parameters of 1.3-µm-wavelength InGaAsP/InP quantum-well (QW) laser diodes, despite numerous studies in this field, remain inferior to parameters of AlGaAs/GaAs QW lasers and 1.5-µm InGaAsP/InP QW laser diodes. Carrier leakage is considered to be the most probable cause of the additional losses in the 1.3-µm-wavelength lasers.¹ In this work photoluminescence (PL) was used for determining the portion of excess carriers recombining in the waveguide of a 1.3-µm InGaAsP/InP QW structure at different excitation levels. The experimental results are explained by considering the effect of space-charge barriers, which improve carrier confinement in the QWs.

© 1995 Optical Society of America