Abstract

Recently, there has been an increasing interest in the quaternary InGaAlAs system, which permits the tailoring of the band gap over a broad range (important for wide-range tuning in network applications) combined with a large electro-optic coefficient and material dispersion. This material is relatively easy to grow lattice matched with InP a t an In content of 0.53, and it therefore represents an interesting alternative to InGaAsP. Moderate-loss waveguide structures and some associated devices, such as modulators¹ and lasers,² have already been demonstrated.

© 1995 Optical Society of America