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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuF2

Time-resolved photoluminescence of piezoelectric InGaAs/GaAs single quantum wells grown by MBE

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Abstract

There has been much interest recently in the properties of strained InGaAs layers grown on the (111) B plane, where the triangular well profile is a promising feature for devices such as modulators and frequency doublers.

© 1995 Optical Society of America

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