Abstract
Vertical-cavity surface-emitting lasers (VCSELs) are inherently integrable into arrays, can be coupled efficiently into fibers, and are amenable to on-wafer testing. These advantages must be weighed against the stringent epitaxial-layer thickness control required in their fabrication. By increasing the index difference between the DBR layers, high reflectivity can be produced with fewer layers, thinner overall structures, and relaxed thickness control. We demonstrate here the use of an epitaxially grown AlAs oxide/GaAs DBR to obtain high reflectivity and the fabrication of an electrically pumped VCSEL using the oxide DBR above the gain region and a conventional AlAs/GaAs DBR below.
© 1995 Optical Society of America
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