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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuA4

Electron-hole competition in BaTiO3:Rh

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Abstract

When two optical beams interfere inside a photorefractive material, charges diffuse from the bright regions and accumulate in the dark regions. If both electrons and holes can migrate, the space-charge fields generated by the carriers will tend to cancel each other.1 This causes in the two-beam-coupling gam coefficient to be significantly smaller than that predicted by a single-carrier model. To optimize the photorefractive gain, one must ensure that either electrons or holes dominate the charge transport. We discuss how the reduction and oxidation states can alter the competition between electrons and holes in BaTiO3:Rh crystals.

© 1995 Optical Society of America

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