Abstract

High-power, diffraction-limited semiconductor-laser sources with high-speed modulation capability are very desirable for applications such as intersatellite space telecommunications. Monolithically integrated master oscillator/flared power-amplifier sources have demonstrated up to 3-W-cw diffraction-limited beams at 980 nm.¹ In this work, we have added an integrated electro-absorption-modulator² section between the master oscillator and the power amplifier to provide high-speed modulation. Monolithical integration is attractive for combining high-speed, high-power, and diffraction-limited operation in miniature, lightweight semiconductor-laser source. The device principle is depicted in Fig. 1. A DBR master oscillator is integrated with multiple-quantum-well electroabsorption modulator. The modulated master-oscillator light is then amplified by a gain-guided, tapered amplifier. During operation, the master oscillator and the amplifier are biased with constant forward current, while the modulator is driven by a reverse voltage.

© 1995 Optical Society of America