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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CThI41

Ultrafast recovery and bistable switching in a strained InGaAs/GaAs(AlAs) modulator

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Abstract

Strained multiple-quantum-well (MQW) structures have advantages over lattice-matched systems in applications of high speed optoelectronics over a broad range of wavelengths.1 Two types of InGaAs MQW p-i-n modulator with low and high barriers were investigated by using femtosecond-resolution pump-probe nonlinear and electroabsorption measurements. The shortest recovery time, 8 ps, was measured in an InGaAs/GaAs modulator, while a high-barrier InGaAs/AIAs device gave 28 ps. We also demonstrate bistable switching in a shallow-well InGaAs/GaAs p-i-n modulator at only a 2-V reverse bias.

© 1995 Optical Society of America

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