Abstract
Strained multiple-quantum-well (MQW) structures have advantages over lattice-matched systems in applications of high speed optoelectronics over a broad range of wavelengths.1 Two types of InGaAs MQW p-i-n modulator with low and high barriers were investigated by using femtosecond-resolution pump-probe nonlinear and electroabsorption measurements. The shortest recovery time, 8 ps, was measured in an InGaAs/GaAs modulator, while a high-barrier InGaAs/AIAs device gave 28 ps. We also demonstrate bistable switching in a shallow-well InGaAs/GaAs p-i-n modulator at only a 2-V reverse bias.
© 1995 Optical Society of America
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