Abstract

Reflection light modulators using integrated metal-oxide ferroelectrics on semiconductor substrates have demonstrated the potential to bgh-performance and low-cost devices.^1,2 In previously reported works, modulation systems using thin-film ferroelectrics were based on phase modulation utilizing the birefringent electro-optic effect of the materials. In this paper, we report what we believe to be the first reflection intensity light modulator using a metal-oxide thin-film material on a silicon substrate.

© 1995 Optical Society of America