Abstract
Current excimer-laser processing techniques can be extended to a broader and more diverse range of materials by moving to vacuum-ultraviolet (VUV; 100-200 nm) laser sources. The high opacity of most materials to VUV radiation and the chemical interactions favored by high-energy photons ensures minimal thermal loading at target surfaces while the short wavelength affords patterning of ~0.1-μm surface features. The attributes of VUV-laser etching, based on ArF and F2 excimer lasers, are presented in this paper for PTFE Teflon, fused silica, and GaAs and InP semiconductors. We also describe single-shot patterning of holographic gratings on PMMA surfaces having 0.11-μm periods.
© 1995 Optical Society of America
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