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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CFF4

4 ± 4 array of GaAs hybrid-on-Si optoelectronic switching nodes operating at 250 Mbit/s

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Abstract

For many years now a much-desired goal of those working on optical interconnects and optical computing has been the integration of high-density silicon electronics with highperformance GaAs-based optoelectronics. In particular, the possibility of direct optical communication to logic chips has stimulated much work on photonic switching.1 The most desirable product is one in which the silicon circuitry is state of the art and is unaffected by the integration with the optoelectronics. For this reason flip-chip solder bonding to finished silicon chips has been pursued.2 Furthermore, modulators, which can be fabricated in densities of 1000 per chip,3 are the preferred optoelectronic component in many systems, such as those in Ref 1. Finally, GaAs/AlGaAs multiple-quantum-well modulators operating at 850 nm offer higher performance than longer-wavelength modulators.4,5

© 1995 Optical Society of America

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