Abstract
The control of both photon modes and electron modes in confined structures is important for the ultimate light sources.1,2 Recently, a GaAs quantum wire of a lateral width less than 10 nm was successfully fabricated using metal organic chemical vapor deposition (MOCVD) selective group, with a clear blue shift of the photoluminescence (PL) peak.3 In addition, in microcavity structures in which the photons are confined, substantial reduction of the threshold current is predicted owing to the controlled spontaneous emission mode.4 In this paper, as the first step towards the ultimate semiconductor lasers, we report the fabrication of a strained InGaAs quantum wire laser with a vertical 4 λ-microcavity using MOCVD selective growth technique.
© 1994 Optical Society of America
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