Abstract
InGaAs(P) quantum well (QW) semiconductor laser diodes (LDs)1 and semiconductor laser amplifiers2,3 (SLAs) have greatly progressed recently as a result of the application of deliberately grown-in biaxial strain. This paper reviews the origins of the improvements and the present state-of-the-art of 1.3 and 1.5 μm wavelength strained-layer InGaAs(P) Lds and SLAs.
© 1994 Optical Society of America
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