Abstract
Understanding the processes involved in semiconductor laser degradation, is critical to such technologies as optical recording and communications. A generic feature of semiconductor laser degradation is a period of relatively rapid power loss occurring during the first few hundred hours of operation.1 In this paper, we describe, for the first time, the facet heating of AlxGa1−xAs single quantum well coated lasers, during and after this initial period of rapid degradation.
© 1994 Optical Society of America
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