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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CWH21

Narrowband tunable semiconductor noninjection FIR hot hole laser and its use for investigations of semiconductors

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Abstract

The population inversion mechanism in Ge under crossed electric and magnetic fields and far-infrared gain due to intersubband transitions of hot holes are briefly described in present work. The experimental results of gain spectral dependence are compared with calculations based on Monte Carlo and balance equations methods. The previously developed lasers of this type had the following parameters: generation wavelength region was 80-210 µm, the pulse power was about 10 W, the emission linewidth was 10-15 µm.

© 1994 Optical Society of America

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