Abstract

Two modes of degradation in semiconductor lasers have been reported.¹ One is a rapid degradation due to dark line defects (DLDs) and the other is gradual degradation characterized by a gradual uniform darkening in the carrier-injected active layer. The dark line defects are supposed to be caused by dislocation networ, however, the physical mechanism of gradual degradation is not yet fully understood. Many microdislocation loops,² an increase in holetrap concentration,³ and a change in the number and energy level of electron traps⁴ may take charge of the gradual degradation.

© 1994 Optical Society of America