Abstract
The advent of blue-green laser diodes (LDs) in 1991 can be attributed to the success of p-fype doping in ZnSe.1 Recently, much effort has gone into decreasing the operation voltage of II–VI devices by improving the p-contact to ZnSe. However, device structures for ZnSe-based LDs have seldom been reported. In this paper, we report high performance current confinement structures by the MBE growth of CdZnSe/ZnSe multi-quantum well (MQW) LDs on patterned p-InGaP layers on p-GaAs substrates for the first time.
© 1994 Optical Society of America
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