Abstract
We have demonstrated the feasibility of ZnMgSSe as cladding layers for blue and green laser diodes. The ZnMgSSe, suppressing carrier overflow with its large energy-gap and forming type I heterostructure with Zn(S)Se, enables us to have II-VI semiconductor blue and green lasers fully lattice-matched to GaAs substrates.
© 1994 Optical Society of America
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