Abstract
Wavelength tuning of strained-layer InGaAs-GaAs-AlGaAs quantum well lasers by three-step metalorganic chemical vapor deposition (MOCVD) selective-area epitaxy has been recently reported.1 Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure (BH) quantum well lasers have also been fabricated using this technique.2 Using these results, an individually addressable array of BH laser elements has been designed and fabricated. In this talk, we demonstrate a twelve-channel strained layer InGaAs-GaAs-AIGaAs BH quantum well laser array for WDM applications grown by conventional atmospheric pressure MOCVD selective-area growth and regrowth.
© 1994 Optical Society of America
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