Abstract

Growth of high-T_c superconductors on semiconductor substrates is of interest mainly for future hybrid devices, but also because semiconductors, especially silicon, are available as cheap and large-sized substrates. However, problems arise in deposition, because of strain induced by the lattice mismatch, and interdiffusion of the constituents between superconductor and semiconductor. Here, we examine the microwave properties of YBa₂Cu₃O₇__s on YSZ-buffered silicon. The critical thickness d_c for YBCO on YSZ/Si is known to be about 50-70 nm. We determine the residual resistance and the absolute value of the magnetic penetration depth for films of different thickness below d_c.

© 1994 Optical Society of America