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Conferences > CLEO > 1994 > CTuS > CTuS1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CTuS1

Ultrafast lifetime engineering in metal/semiconductor composites

E. S. Harmon, M. R. Melloch, J. M. Woodall, N. Otsuka, C. L. Chang, and D. D. Nolte

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Abstract

Molecular beam epitaxy (MBE) of GaAs and AlGaAs at low substrate temperatures produces films with up to 2% excess arsenic. Annealing to temperatures greater than 600°C forces most of this excess arsenic to precipitate into metallic clusters. Annealed low-temperature-growth GaAs (LTG:GaAs) or AlGaAs (LTG:AlGaAs) films are well suited for photoconductive switch applications because they exhibit relatively high mobilities, ultrashort lifetimes, and high resistivities.

© 1994 Optical Society of America

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