Abstract

The bandwidth and density limitations of electrical interconnects within a computer may be alleviated by using light beams to communicate information between chips. Because of its ability to provide high power with high spectral and spatial quality, the Nd:YAG laser has been considered as a possible light source for these systems. We have shown that the InGaAs/GaAsP material system may be used to grow undetected MQWs on GaAs for modulators at 1.064 μm.^1,2 This is because the addition of phosphorous to the barrier results in negative strain in the barrier balancing the positive strain in the InGaAs well, allowing in principle any number a periods to be grown without having any net strain build up.

© 1994 Optical Society of America