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Conferences > CLEO > 1994 > CTuK > CTuK59
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CTuK59

High-concentration and high single-pass- gain Ti:sapphire crystals by new growth techniques

Peizhen Deng, Qiang Zhang, Fuxi Gan, Nobuhiko Sarukura, Zheniin Liu, and Yusaburo Segawa

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Abstract

Ti:sapphire has enabled tunable high-efficiency and high-power laser systems.1 High figure of merit (FOM) crystals for oscillators have been grown by the CZ-method2 and heat exchange method (HEM).3 For multipass amplifiers, however, crystals require higher single-pass-gain rather than high FOM. In this presentation, we will describe new crystal-growth techniques, which produce high-gain and high-concentration crystals.

© 1994 Optical Society of America

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