Tunable pulsed SLM Ti:sapphire laser injection-seeded outside gain peak region

G. Y. Yin; A. Kasapi; M. Jain; A. Merriman

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CTuK57

Tunable pulsed SLM Ti:sapphire laser injection-seeded outside gain peak region

G. Y. Yin, A. Kasapi, M. Jain, and A. Merriman

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

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Poster Session 1 (CTuK)

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G. Y. Yin, A. Kasapi, M. Jain, and A. Merriman, "Tunable pulsed SLM Ti:sapphire laser injection-seeded outside gain peak region," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CTuK57.

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Abstract

We report the demonstration of a tunable pulsed single longitudinal mode Ti:sapphire laser injection-seeded at 850 nm. This laser differs from previously published seeded Ti:sapphire systems^1-2 in that it operates off from the gain peak of Ti:sapphire laser so that seeding with milliwatt-level diode lasers must be augmented with appropriate intracavity frequency discrimination elements.

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