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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CThF3

Room temperature operation of strained (In,Ga)As quantum well lasers fabricated on a (112)B GaAs substrate

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Abstract

Strained (In,Ga)As quantum well lasers grown on non-[001] oriented substrates are currently of great interest for possible use in the design of intra-cavity, monolithic emitters which create blue-green light by second harmonic generation. Presently, blue-green light can be generated by coupling external TE- and TM-polarized laser light at λ = 0.95 to λ = 1.00 urn into passive waveguide structures grown on (001) GaAs substrates. Theoretical studies predict that for waveguide structures grown on non-(001) surfaces, for example, the (111) and (112) surfaces, the generation of the second-harmonic light can be effected with only the TE-polarized field.1,2 This possibility makes the operation of lasers on (112) surfaces important from the point of view that the counter-propagating fields of the radiation in the (112) lasers could be completely trapped internally, thus leading to nonlinear self-field interactions which can generate the second-harmonic field. The second-harmonic field would be orthogonal to the fundamental. Quantum well structures grown on the (112) surfaces are also attractive because of their anisotropic optical properties which may be useful for applications in novel optoelectronic devices.3

© 1994 Optical Society of America

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