Abstract
GaAs-based MQW lasers exhibiting very efficient high-speed and low-chirp direct modulation are of great interest for mono- lithically-integrated optoelectronic transmitter circuits, due to the maturity of GaAs transistor and circuit fabrication technologies. By simultaneously adding p-doping and strained In035Ga0>6SAs/GaAs MQWs in the laser active region, we have previously demonstrated both very efficient high-speed modulation (20 GHz at a dc bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz (dc bias, heat-sink temperature = 25°C).1 In addition, the above devices show a factor of 2 reduction in the line- width enhancement factor, a, compared with that of unstrained, undoped GaAs/ AlGaAs MQW lasers.2 This reduction is expected to lead to a substantial reduction in chirp under high-speed modulation.
© 1994 Optical Society of America
PDF ArticleMore Like This
J. D. Ralston, S. Bürkner, W. Bronner, J. Hornung, S. Weisser, E. C. Larkins, R. E. Sah, J. Rosenzweig, and J. Fleissner
UMA2 Ultrafast Electronics and Optoelectronics (UEO) 1995
A. Schönfelder, S. Weisser, K. Czotscher, E.C. Larkins, W. Benz, J. Daleiden, J. Fleissner, M. Maier, J.D. Ralston, and J. Rosenzweig
PDP.2 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995
I. Esquivias, S. Weisser, P. J. Tasker, J. D. Ralston, J. Rosenzweig, and B. Romero
CFJ5 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994