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Tapered semiconductor optical amplifiers were reported1,2 recently with several watts of cw power near 980 nm in predominantly single-lobed and nearly diffraction-limited radiation patterns. The first demonstrations used Ti:sapphire master oscillators; subsequently, powers exceeding 1 W with good beam quality were demonstrated using all-semiconductor monolithic3 and hybrid4 master-oscillator/power-amplifier configurations. Similar tapered semiconductor devices can also be operated as lasers,5 offering greater simplicity of fabrication and use for some applications.
© 1994 Optical Society of America
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