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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CFC4

Stable second-order nonlinearity in SiO2-based waveguide structures on Si

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Abstract

There is a need for inexpensive, manufacturable phase modulators and frequency converters, based on a second-order optical nonlinearity, that can be readily integrated with other optoelectronic components. Devices based on crystalline materials are difficult to integrate. Waveguides fabricated in polycrystalline materials generally suffer from excess losses. Organic and polymer- based nonlinear materials and devices have been the most successful, but have not yet provided a robust, broadly applicable solution. Thus, our initial report1 of a relatively large (χ(2) ~ 1 pm/V), stable nonlinearity formed in the near surface region of bulk fused silica materials by a combined temperature and electric field poling process has generated considerable interest. Subsequently, corona poling was used to induce a comparable nonlinearity in thin films of Corning 7059™ sputter-deposited on various glass substrates and unphase- matched waveguide second-harmonic generation (SHG) was demonstrated.2 Electron-beam irradiation of lead silicate glasses3 leads to a comparable nonlinearity. An electro-optic effect has been reported4 in waveguides formed by e-beam densification of bulk silica and poled by the temperature/field process. We have reported5 on corona poling of Si3N4/SiO2/Si waveguide structures; however, the nonlinearity was relatively unstable, decaying within several days, probably due to leakage of transient surface charges. In this paper, we report on the first observation of a stable second-order nonlinearity in a SiO2-based waveguide stack grown on a silicon substrate.

© 1994 Optical Society of America

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