Abstract

A novel technique for the integration of GaAs devices on Si substrates is demonstrated in this paper. GaAs devices are floated off their substrate by sacrificial etching techniques and placed into holes etched into silicon substrates by fluidic transport (Fig. 1). Processing on both sides of the GaAs devices can be done prior to etching them free. The GaAs devices, after being etched free from the substrate, are transferred into an inert liquid solution. By dispensing the solution on a Si substrate, the devices fall into holes etched in Si which are specifically designed to act as receptors for the devices.

© 1994 Optical Society of America