Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 1993 > CWB > CWB1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CWB1

High quality wide bandgap II-VI compounds and superiattices prepared by molecular beam epitaxy

Aidong Shen, Yunliang Chen, Jie Cui, Liang Xu, Hailong Wang, and Zhijiang Wang

Not Accessible

Your library or personal account may give you access

Abstract

Wideband-gap II-VI compound semiconductors are useful materials for optoelectronic devices in the visible region, such as blue light-emitting diodes and short-wavelength semiconductor lasers.1,2 This paper reports the growth of ZnSe-ZnS and ZnSe-ZnTe strained-layer superiattices (SLSs) by molecularbeam epitaxy (MBE). X-ray diffraction, transmission electron microscopy (TEM) observation, photoluminescence (PL) spectra, transient PL spectra, absorption spectra, and Ratnan scattering measurements were performed to characterise the structural and optical properties of these materials.

© 1993 Optical Society of America

PDF Article
More Like This
Luminescence of wide bandgap II-VI compounds — past, present, and future

Shigeo Shionoya
MGG1 OSA Annual Meeting (FIO) 1989

Multiple quantum wells composed of II-VI compound semiconductors

LESLIE A. KOLODZIEJSKI and ROBERT L. GUNSHOR
TUII1 International Quantum Electronics Conference (IQEC) 1987

Gain and excitation dynamics in II–VI epitaxial layers

H. Kalt, M. Umlauff, F. A. Majumder, S. V. Bogdanov, W. Langbein, M. Grün, C. Klingshirn, K. P. Geyzers, M. Heuken, A. Naumov, and W. Gebhardt
QThH24 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use