Abstract
We demonstrate a simple example of a new class of wavelength selective detectors. The devices are based on placing thin absorbers in a standing wave pattern. Quantum wells are ideal for the absorbing layers, since they are much thinner than the wavelength in the material. The example device here uses a single quantum well in a p-i-n diode on a mirror. This structure gives a detector with 10 nm full-width at half-maximum (FWHM). It also produces a semiconductor detector with very little absorption at a specific wavelength shorter than the optical absorption edge; this is normally difficult to achieve, and could be important for systems that must separately detect more than one wavelength. Such wavelength sensitive detectors could he useful for wavelength-division multiplexed optical networks and switches, and for chemical and environmental sensors.
© 1993 Optical Society of America
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